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MITSUBISHI MEMORY CARD FLASH MEMORY CARDS
MF82M1-GMCAVXX
8/16-bit Data Bus Flash Memory Card
MF84M1-GMCAVXX MF88M1-GMCAVXX MF816M-GMCAVXX MF820M-GMCAVXX MF832M-GMCAVXX
Connector Type
MF82M1-GNCAVXX MF84M1-GNCAVXX MF88M1-GNCAVXX MF816M-GNCAVXX MF820M-GNCAVXX MF832M-GNCAVXX
Two- piece 68-pin
DESCRIPTION The MF8XXX-GMCAVXX is a flash memory card which uses eight-megabit or sixteen megabit flash electrically erasable and programmable read only memory IC ' s as common memory and a 64-kilobit electrically erasable and programmable read only m e m o r y a s a t t r i b u t e m e m o r y. The MF8XXX-GNCAVXX is a flash memory card which uses eight-megabit or sixteen megabit flash electrically erasable and programmable read only memory IC ' s . FEATURES 68 pin JEIDA/PCMCIA 8/16 controllable data bus width
Buffered interface TTL interface level Program/erase operation by software command control 100,000 program/erase cycles Write protect switch O p e r a t i n g t e m p e r a t u r e = 0 t o 7 0 C .No V p p r e q u i r e d ( 5 V Vcc only operation) A P P L I C A T I O NS Notebook computers Printers Industrial machines
PRODUCT LIST Item Type name MF82M1-GMCAVXX MF84M1-GMCAVXX MF88M1-GMCAVXX MF816M-GMCAVXX MF820M-GMCAVXX MF832M-GMCAVXX MF82M1-GNCAVXX MF84M1-GNCAVXX MF88M1-GNCAVXX MF816M-GNCAVXX MF820M-GNCAVXX MF832M-GNCAVXX Memory capacity 2MB 4MB 8MB 16MB 20MB 32MB 2MB 4MB 8MB 16MB 20MB 32MB Attribute memory Data bus width(bits) Access time (ns) Memory IC' s 8Mbit Outline drawing
Yes 16Mbit
8/16
150
8Mbit
68P-013
No( F F h ) 16Mbit
MITSUBISHI ELECTRIC 1/22
Feb.1999 Rev2.0
MITSUBISHI MEMORY CARD FLASH MEMORY CARDS PIN ASSIGNMENT
Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 Symbol GND D3 D4 D5 D6 D7 CE1# A10 OE# A11 A9 A8 A13 A14 WE# NC VC C NC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 D0 D1 D2 WP GND Ground Function Pin Symbol No. 35 GND 36 CD1# 37 D11 38 D12 39 D13 40 D14 41 D15 42 CE2# 43 NC 44 NC 45 NC 46 A17 47 A18 48 A19 49 A20 50 A21 51 VC C 52 NC 53 A22 54 A23 55 A24 56 NC 57 NC 58 NC 59 NC 60 NC 61 REG# 6 2 BVD2 6 3 BVD1 64 D8 65 D9 66 D10 67 CD2# 68 GND Function Ground Card detect 1
Data I/O
Data I/O
Card enable 1 Address input Output enable
Card enable 2 No connection
Address input
Write enable No connection Power supply voltage No connection
Address input A21 (NC for < 2 MB types) Power supply voltage No connection A22 (NC for < 4 MB types) A23 (NC for < 8 MB types) A24 (NC for < 16 MB types)
Address input
Address input
No connection
Attribute memory select Battery voltage detect 2 Battery voltage detect 1 Data I/O Card detect 2 Ground
Data I/O Write protect Ground
B L O C K D I A G R A M (MF832M-GMCAVXX)
A24 A23 A22 A21 A0 A20 A19 A18 A17 A16 A15 A14 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1
ADDRESSDECODER
16
CE#
8
ADDRESSBUS BUFFERS
21
COMMON MEMORY 16Mbit FLASH MEMORY x16 OE# WE#
8
DATA-BUS BUFFERS
D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1
CE1# CE2# WE# OE# REG# WP WRITE PROTECT CD1# CD2#
OFF ON
MODE CONTROL LOGIC VCC CE# OE# WE#
13
ATTRIBUTE MEMORY 64Kbit 2 E PROM x1
8
BVD2 BVD1 GND
MITSUBISHI ELECTRIC 2/22
Feb.1999 Rev2.0
MITSUBISHI MEMORY CARD FLASH MEMORY CARDS FUNCTIONAL DESCRIPTION The operating mode of the card is determined by five active low control signals (REG#, CE1#, CE2#, OE#, WE#), and control registers located in each memory IC. Common memory function When the REG# signal is set to a high level common memory is selected. -Read mode When each memory IC in the card are switched, the control registers of each memory IC are set to read only mode. Operation of the card then depends on the four possible combinations of CE1# and CE2# (note WE# should be set to a high level when the device is in read mode except during combination (4) where it's condition is unimportant) : (1) If CE1# is set to a low level and CE2# is set to a high level, the card will work as an eight bit data bus width card. Data can be accessed via the lower half of the data bus (D0 to D7). (2) If both CE1# and CE2# are set to a low level, data will be accessible via the full sixteen bit data bus width of the card. In this mode LSB of address bus (A0) is ignored. (3) If CE1# is set to a high level and CE2# is set to a low level the odd bytes (only) can be accessed through upper half of the data bus (D8 to D15). This mode is useful when handling the odd (upper) bytes in a sixteen bit interface system. Note that A0 is also ignored in this operating condition. (4) If CE1# and CE2# are set to a high level, the card will be in standby mode where it consumes low power. The data bus is kept high impedance. When OE# is set to a low level data can be read from the card, depending on the address applied and the setting of CE1# and CE2# as mentioned above, except under combination (4) When OE# is set to a high level and WE# is set to a high level the card is in an output disable mode -W r i t e m o d e By using the 4 combinations of CE1# and CE2# as described under Read only above the appropriate Data Out and Command/Data In bus selection can be made. If OE# is set to a high level and WE# set to a low level, the control register will latch command data applied at the rising edge of the WE# signal. Note that more than one bus cycle may be required to latch the command and/or the related data-please refer to the Command Definition table. If OE# is set to a low level and WE# is set to a high level the card data can be read from the card depending on the condition of the control register.
After latching the command data, the card will go into programming, erasure or other operation mode. For details please refer to the Command Definition table, each individual command's definition and the programming and erasure algorithms.
Attribute memory function When the REG# signal is set to a low level attribute memory is selected. GM series The card includes a byte wide attribute memory consisting of 8K bytes of E 2 P R O M l o c a t e d a t t h e e v e n addresses when the card is in the 8 bit operating mode. It is located at sequential addresses on the lower half of the data bus when the card is in 16 bit operating mode i.e. A0 is ignored. To access the attribute memory, first set CE1# and CE2#. Set CE1# to low level and CE2# to high level for 8 bit mode or CE1# and CE2# to low level for 16 bit mode. Then select the required address. Note please take care that in 8 bit mode A0 must be set low for attribute memory access i.e. an even address is applied. In 16 bit mode it is not important whether A0 is high or low. Data can then be read by setting OE# to a low level with WE set to a high level. Writing to the attribute memory can be achieved in byte mode only. To write to attribute memory set OE# to high level and WE# to low level. The data to be written will be latched at the rising edge of WE#. Then, unless WE# changes back from high level to low level over 100 s an automatic erase/program operation starts which will complete within 10ms. Please also remember that for attribute memory A0 is not applicable and it should be set to low, even addressing only, in 8 bit mode or ignored for 16 bit mode. GN series The card then outputs FFh on the lower half of the data bus (D0 to D7) when the following conditions are applied; (1)CE1#=low level,CE2#=high level,OE#=low level,WE#=high level,A0=low level. (2)CE1#=low level,CE2#=low level,OE#=low level,WE#=high level.
MITSUBISHI ELECTRIC 3/22
Feb.1999 Rev2.0
MITSUBISHI MEMORY CARD FLASH MEMORY CARDS Write protect mode The card has a write protect switch on the opposite edge to the connector edge. When it is switched on, the card will be placed into a write protect mode, where data can be read from the card but it cannot be written to it. The WP output pin is set to a high l e v e l w h e n t h e c a r d i s i n w r i t e p r o t e c t m o d e a n d VCC is applied. When the card is not in write protect mode the WP output pin is set to a low level when VCC i s a p p l i e d . B y r e a d i n g t h e s t a t e o f t h e W P output the host system can easily check whether the card is in write protect mode or not.
FUNCTION TABLE (COMMON MEMORY)
Mode Standby Read A(16-bit) Read B(8-bit) Read C(8-bit) Write A(16-bit) Write B(8-bit) REG# H H H H H H H H Write C(8-bit) Output disable H H CE2# H L H H L L H H L X CE1# H L L L H L L L H X OE# X L L L L H H H H H WE# X H H H H L L L L H A0 X X L H X X L H X X I/O (D15 to D8) High-Z Odd byte data out High-Z High-Z Odd byte data out Command or odd byte data in High-Z High-Z Command or odd byte data in High-Z I/O (D7 to D0) High-Z Even byte data out Even byte data out odd byte data out High-Z Command or even byte data in Command or even byte data in Command or odd byte data in High-Z High-Z
Note 1 : H=VI H , L=VIL, X=VI H o r VI L , High-Z= High-impedance To operate refer to the command definition, algorithms and so on.
FUNCTION TABLE (ATTRIBUTE MEMORY ) GM series
Mode Standby Read A(16-bit) Read B (8-bit) Read C(8-bit) Write A(16-bit) Write B (8-bit) Write C(8-bit) Output disable REG# L L L L L L L L L L CE2# H L H H L L H H L X CE1# H L L L H L L L H X OE# X L L L L H H H H H WE# X H H H H L L L L H A0 X X L H X X L L X X I/O (D15 to D8) High-Z Data out(not valid) High-Z High-Z Data out(not valid) Odd byte data in (not valid) High-Z High-Z Odd byte data in (not valid) High-Z I/O (D7 to D0) High-Z Even byte data out Even byte data out Data out(not valid) High-Z Even byte data in Even byte data in Odd byte data in (not valid) High-Z High-Z
GN series
Mode Standby Read A(16-bit) Read B (8-bit) Read C(8-bit) Output disable REG# L L L L L L CE2# H L H H L X CE1# H L L L H X OE# X L L L L H WE# X H H H H H A0 X X L H X X I/O (D15 to D8) High-Z Data out(not valid) High-Z High-Z Data out(not valid) High-Z I/O (D7 to D0) High-Z Data out (FFh) Data out (FFh) Data out(not valid) High-Z High-Z
Note 2 : H=VI H , L=VIL, X=VI H o r VI L , High-Z= High-impedance
MITSUBISHI ELECTRIC 4/22
Feb.1999 Rev2.0
MITSUBISHI MEMORY CARD FLASH MEMORY CARDS COMMAND DEFINITION The corresponding memories of the card are set to read/write mode and the operation is COMMAND DEFINITION TABLE Command Read/Reset Programme setup/ Programme Erase Setup/ Erase Confirm Programme Suspend/Resume Erase Suspend/ Resume Read Status Register Clear Status Register Read Device Identifier Code Bus cycles M o d e 1 Write 2 2 2 2 2 1 2 Write Write Write Write Write Write Write First bus cycle Address Data in ZA FFh(FFFFh) PA BA PA BA ZA ZA ZA 40(4040)h 20(2020)h B0(B0B0)h B0(B0B0)h 70(7070)h 50(5050)h 90(9090)h Second bus cycle Address Data in PA BA PA BA ZA DIA PD D0(D0D0)h D0(D0D0)h D0(D0D0)h -
controlled by the software command written in the control register.
Mode Write Write Write Write Read Read
Data out RD DID
Note 3: Indicates the basic functions of commands and should not write another commands. Refer to the algorithms to operate. Signal status is defined in function table and bus status. Parenthesized data shows the data for 16 bit mode operation. ZA=an address of a memory zone (Please refer to the memory zone) PA=Programming address PD=Programming data BA=An address of a memory block (Please refer to the memory block) RD=Data of status Register DIA=Device identifier address 0 0 0 0 0 0 h f o r m a n u f a c t u r e r c o d e 0 0 0 0 0 2 h f o r device code DID=Device identifier data 2MB=manufacturer code : 89 (8989)h device code : A6h (A6A6)h Others=manufacturer code : 89 (8989)h device code : AA (AAAA)h
Read/Reset The memory in the card is switched to read mode by writing FFh (FFFFh for 16 bit operation) into the control resister. This mode is maintained until the contents of register are changed. This mode needs to be written to every memory zone to which access is required. P r o g r a m m e S e t u p / Programme The setup programme command sets up the card for programming. It is applied when 40h (4040h for 16 bit operation) is written to control register. Programming will take place automatically after latching the address and data which are applied at the rising edge of WE#. The completion of p r o g r a m m e c a n b e c o n f i r m e d b y reading status register. (For details please refer to the algorithm)
Erase Setup/Erase confirm The erase setup is a command to set up the memory block for erasure. Writing setup erase command 20h (2020h for 16 bit operation) in the control register followed by erase confirm command D0h (D0D0h for 16 bit operation) will initiate a erasure operation. Erasing will take place automatically after the rising edge of WE# controlled by a internal timer. The completion of erase can be confirmed by reading status register. (For details please refer to the algorithm) These commands will not erase all the data of a memory card and should be repeated for all the required memory blocks. At an eight bit access mode it should be noticed that the erasure of a memory block will result in odd byte or even byte erasure.
MITSUBISHI ELECTRIC 5/22
Feb.1999 Rev2.0
MITSUBISHI MEMORY CARD FLASH MEMORY CARDS Erase Suspend/Erase Resume The erase suspend command B0h (B0B0h for 16 bit operation) is a command to generate erase interruption and to read data from another block of selected memory zone. By writing in the control register erase resume command D0h (D0D0h for 16 bit operation), the memory block will continue the erase operation. These commands must be executed in erase algorithm. (For details please refer to the algorithm) Read Status Register The Read status register is a command to read the s t a t u s r e g i s t e r ' s d a t a a n d t o m a k e s u r e programme or erase operations complete successfully. The data of status register can be read after writing 70h (7070h for 16 bit operation) in the control register. The register's read data is latched on the falling edge of OE#. At p r o g r a m m e o r e r a s e , t h e s t a t u s register's data must be read to verify the results. Clear Status Register The clear status register command will clear data of status register. It is applied when 50h (5050h for 16 bit operation) is written to the control r e g i s t e r . I f a n e r r o r o c c u r r e d d u r i n g programme or erase, the status register must be cleared before retrying programme or erase. Read Device Identifier Codes The read device identifier codes command is implemented by writing 90h (9090h for 16 bit operation) to the command register. After writing the command, manufacturer code can be read at the address of 000000h of the zone and device code can be read at the address 000002h of the zone. Each card uses the same type of memory throughout and each memory zone will respond the same code. (Do not apply high voltage to A10 pin in order to try and read the device identifier codes as this will result in the card being destroyed.)
STATUS REGISTER When operating programme or erase, it is necessary to read status register data and to transact these bit. Each memory IC used in this 7 (15) BIT 6 (14) BIT Programme/ Erase Erase Status Bit Suspend Bit Note 4: ( ) ; for 16 bit operation Bit ; Field name 7(15) BIT ; P r o g r a m m e / E r a s e S t a t u s B i t 0=Busy (in programming/erasing) 1=Ready 5(13) BIT ; Erase Error Bit 1=Erase Error 3(11) BIT ; Vcc Error 1 = E r r o r o f v o l t a g e a t Vcc 1,0(9,8) BIT ; Reserved for future 5 (13) BIT Erase Error Bit
card has internal status register to make sure programme or erase operations complete successfully. 4 (12) BIT Programme Error Bit 3 (11) BIT Vcc Error Bit 2 (10) BIT Programme Suspend Bit 1,0 (9,8) BIT Reserved
Bit ; Field name 6(14) BIT ; Erase Suspend Bit 1=Erase Suspended 4(12) BIT ; P r o g r a m m e E r r o r B i t 1=Programme Error 2(10) BIT ; P r o g r a m m e S u s p e n d B i t 1=Programme Suspended
MITSUBISHI ELECTRIC 6/22
Feb.1999 Rev2.0
MITSUBISHI MEMORY CARD FLASH MEMORY CARDS MEMORY ZONE AND BLOCK 8 bit mode
Even byte
0000000h 03FFFFEh 0400000h 07FFFFEh 0800000h 0BFFFFEh 0C00000h 0FFFFFEh 1000000h 13FFFFEh 1400000h 17FFFFEh 1800000h 1BFFFFEh 1C00000h 1FFFFFEh
Odd byte
0000001h 03FFFFFh 0400001h 07FFFFFh 0800001h 0BFFFFFh 0C00001h 0FFFFFFh 1000001h 13FFFFFh 1400001h 17FFFFFh 1800001h 1BFFFFFh 1C00001h 1FFFFFFh
Zone0 Zone2 Zone4 Zone6 Zone8 Zone10 Zone12 Zone14
Zone1 Zone3 Zone5 Zone7 Zone9 Zone11 Zone13 Zone15
0000001h 001FFFFh 0020001h 003FFFFh
Block0 Block1
. . .
. . .
Block31
0300001h 03FFFFFh
2MB; 1 zone=64KB1 6 b l o c k s O t h e r s ; 1 z o n e = 6 4 K B 3 2 b l o c k s
Note 5 : 2MB;1 zone=0h to 1FFFFFh address Others;1 zone=0h to 3FFFFFh address Zone 2 to 15 do not exist in 2MB Zone 2 to 15 do not exist in 4MB Zone 4 to 15 do not exist in 8MB Zone 8 to 15 do not exist in 16MB Zone 10 to 15 do not exist in 20MB 16 bit mode
Even byte
0000000h 03FFFFFh 0400000h 07FFFFFh 0800000h 0BFFFFFh 0C00000h 0FFFFFFh 1000000h 13FFFFFh 1400000h 17FFFFFh 1800000h 1BFFFFFh 1C00000h 1FFFFFFh
Odd byte Zone0 Zone1 Zone2 Zone3 Zone4 Zone5 Zone6 Zone7
0300000h 03FFFFFh 0000000h 001FFFFh 0020000h 003FFFFh
Block0 Block1
. . .
. . .
Block31
2MB; 1 zone=64KW1 6 b l o c k s O t h e r s ; 1 z o n e = 6 4 K W 3 2 b l o c k s
Note 6 : 2MB;1 zone=0h to 1FFFFFh address Others;1 zone=0h to 3FFFFFh address Zone 1 to 7 do not exist in 2MB Zone 1 to 7 do not exist in 4MB Zone 2 to 7 do not exist in 8MB Zone 4 to 7do not exist in 16MB Zone 5 to 7 do not exist in 20MB
MITSUBISHI ELECTRIC 7/22
Feb.1999 Rev2.0
MITSUBISHI MEMORY CARD FLASH MEMORY CARDS PROGRAMME ALGORITHM PROGRAMME 8 bit Operation Write the programme setup command (40h) to the address to be programmed. The next write sequence will initiate the programming operation which will end automatically as this period being controlled by an internal timer and the data will be programmed. To make sure that the data is programmed correctly read data of the status register. The read status register command (70h) may or may not be applied to read the data after the programme data input. If the data is programmed step address and programme data according to the above sequence. The next address to be programmed should be written with in a memory zone. After the last programming operation, write the reset command (FFh) in control register of the programmed memory zones. When overwriting bits programmed as "0", programme " 1 " o r t h e d e v i c e r e l i a b i l i t y i s a f f e c t e d . 16 bit operation The algorithm of 16 bit programming is almost same as the 8 bit programming. (Please refer to the algorithm and the status of bus at programming) PROGRAMME SUSPEND 8 bit Operation The programme suspend is a command to generate zone p r o g r a m m e i n t e r r u p t i o n i n o r d e r t o r e a d o r data from another block of the selected memory zone. It is necessary to write the erase suspend command (B0h) in the programme algorithm. The execution of the programme suspend can be confirmed by reading data of the status register. Then it is necessary to write the read command (FFh) in control register in order to read data, after reading the status register's data. After the programme resume command (D0h) is written in the control register, the memory zone will continue the programme operation. 16 bit Operation M o s t o f t h e a l g o r i t h m o f 1 6 b i t programme suspending is same as the one of the 8 bit programme suspending. (Please refer to the algorithm and the state of bus at programme suspending.) ERASE ALGORITHM ERASE 8 bit Operation Write the erase setup command (20h) and erase confirm command (D0h) for the applicable block address. An erasure operation will then commence which will be finished in 1.6s typical or less this being automatically controlled by an internal timer. To make sure that the data is erased correctly and read data of the status register. The read status register command (70h) may or may not be applied to read the data after the erase confirm command. After erasure has completed write the reset command (F F h ) t o t h e c o n t r o l r e g i s t e r , p r o c e e d to the erase operation for the next memory block. 16 bit Operation Most of the algorithm of 16 bit erasure is same as the one of the 8 bit erasure. (Please refer to the algorithm and the state of bus at erasure.) ERASE SUSPEND 8 bit Operation The erase suspend is a command to generate block e r a s e i n t e r r u p t i o n i n o r d e r t o r e a d o r programme data from another block of the selected memory zone. It is necessary to write the erase suspend command (B0h) in the erase algorithm. The execution of the erase suspend can be confirmed by reading data of the status register. Then it is necessary to write the read command (FFh) in control register in order to read data, after reading the status register's data. After the erase resume command (D0h) is written in the control register, the memory block will continue erase operation. 16 bit Operation Most of the algorithm of 16 bit erase suspending is same as the one of the 8 bit erase suspending. (Please refer to the algorithm and the state of bus at erase suspending.)
MITSUBISHI ELECTRIC 8/22
Feb.1999 Rev2.0
MITSUBISHI MEMORY CARD FLASH MEMORY CARDS PROGRAMME ALGORITHM 8 bit mode
PROGRAMME START ADDRESS=FIRST LOCATION WRITE PROGRAMME SETUP COMMAND(40h) WRITE PROGRAMME DATA READ STATUS REGISTER BIT 7= " 0" CHECK PROGRAMME STATUS BIT BIT 7= " 1" CHECK Vcc ERROR BIT BIT 3= " 0" CHECK PROGRAMME ERROR BIT BIT 4= " 0" ADDRESS= NEXT ADDRESS NO YES WRITE RESET COMMAND(FFh) WRITE STATUS REGISTER CLEAR COMMAND(50h) BIT 4= " 1" BIT 3= " 1" PROGRAMME SUSPEND? YES PROGRAMME SUSPEND LOOP A
NO
LAST ADDRESS?
PROGRAMME PASSED
PROGRAMME FAILED
MITSUBISHI ELECTRIC 9/22
Feb.1999 Rev2.0
MITSUBISHI MEMORY CARD FLASH MEMORY CARDS PROGRAMME ALGORITHM 16 bit mode
PROGRAMME START ADDRESS=FIRST LOCATION WRITE PROGRAMME SETUP COMMAND(4040h) WRITE PROGRAMME DATA READ STATUS REGISTER BIT 7.AND.15= " 0" CHECK PROGRAMME STATUS BIT BIT 7.AND.15= " 1" CHECK Vcc ERROR BIT BIT 3.OR.11= " 0" CHECK PROGRAMME ERROR BIT BIT 4.OR.12= " 0" ADDRESS= NEXT ADDRESS NO YES WRITE RESET COMMAND(FFFFh) WRITE STATUS REGISTER CLEAR COMMAND(5050h) BIT 4.OR.12= " 1" BIT 3.OR11= " 1" PROGRAMME SUSPEND? YES PROGRAMME SUSPEND LOOP B
NO
LAST ADDRESS?
PROGRAMME PASSED
PROGRAMME FAILED
MITSUBISHI ELECTRIC 10/22
Feb.1999 Rev2.0
MITSUBISHI MEMORY CARD FLASH MEMORY CARDS
A WRITE SUSPEND COMMAND(B0h) READ STATUS REGISTER
BIT 7.= " 0"
B WRITE SUSPEND COMMAND(B0B0h) READ STATUS REGISTER
BIT 7.AND.15.= " 0"
CHECK PROGRAMME STATUS BIT
BIT 7.= " 1" BI T 2.= " 0"
CHECK PROGRAMME STATUS BIT
BIT 7.AND.15.= " 1" BI T 2.AND.10.= " 0"
CHECK PROGRAMME SUSPEND BIT
BIT 2.= " 1"
CHECK PROGRAMME SUSPEND BIT
BIT 2.AND.10.= " 1"
WRITE READ COMMAND(FFh) READ DATA WRITE RESUME COMMAND(D0h) PROGRAMME SUSPEND PASSED
WRITE READ COMMAND(FFFFh) READ DATA WRITE RESUME COMMAND(D0D0h) PROGRAMME SUSPEND PASSED
Note 7: If V c c e r r o r b i t i s d e t e c t e d , t r y t o p r o g r a m m e a g a i n a t V c c l e v e l . T h i s i s a programme algorithm for a memory zone and not for a card. Reading data from the zone generating programme suspend. .OR. : =Logical or ; .AND. : =Logical and
MITSUBISHI ELECTRIC 11/22
Feb.1999 Rev2.0
MITSUBISHI MEMORY CARD FLASH MEMORY CARDS ERASE ALGORITHM 8 bit mode
ERASE START ADDRESS=BLOCK ADDRESS WRITE ERASE SETUP COMMAND(20h) WRITE ERASE COMMAND(D0h) ERASE SUSPEND LOOP C YES
READ STATUS REGISTER
BIT 7= " 0"
NO ERASE SUSPEND?
CHECK ERASE STATUS BIT
BIT 7 = " 1"
CHECK Vcc ERROR BIT
BIT 3= " 0"
BIT 3= " 1"
CHECK CONTROL COMMAND BIT
BIT 4. OR. .5= " 0"
BIT 4. OR. 5= " 1"
CHECK ERASE ERROR BIT BIT 5.OR.13 = " 0" WRITE RESET COMMAND(FFh)
BIT 5.OR.13= " 1"
WRITE STATUS REGISTER CLEAR COMMAND(50h)
ERASE PASSED
ERASE FAILED
MITSUBISHI ELECTRIC 12/22
Feb.1999 Rev2.0
MITSUBISHI MEMORY CARD FLASH MEMORY CARDS ERASE ALGORITHM 16 bit mode
ERASE START ADDRESS=BLOCK ADDRESS WRITE ERASE SETUP COMMAND(2020h) WRITE ERASE COMMAND(D0D0h) ERASE SUSPEND LOOP D YES
READ STATUS REGISTER
BIT 7.AND.15= " 0"
NO ERASE SUSPEND?
CHECK ERASE STATUS BIT BIT 7.AND>15 = " 1" CHECK Vcc ERROR BIT
BIT 3.OR.11= " 0"
BIT 3.OR.11= " 1"
CHECK CONTROL COMMAND BIT
BIT 4.OR.5 OR. 12.OR.13= " 0"
BIT 4.OR.5 OR. 12.OR.13= " 1"
CHECK ERASE ERROR BIT BIT 5 .OR.13= " 0" WRITE RESET COMMAND(FFh)
BIT 5.OR.13= " 1"
WRITE STATUS REGISTER CLEAR COMMAND(50h)
ERASE PASSED
ERASE FAILED
MITSUBISHI ELECTRIC 13/22
Feb.1999 Rev2.0
MITSUBISHI MEMORY CARD FLASH MEMORY CARDS
C WRITE SUSPEND COMMAND(B0h) READ STATUS REGISTER
BIT 7.= " 0"
D WRITE SUSPEND COMMAND(B0B0h) READ STATUS REGISTER
BIT 7.AND.15.= " 0"
CHECK ERASE STATUS BIT
BIT 7.= " 1" BI T 6.= " 0"
CHECK ERASE STATUS BIT
BIT 7.AND.15.= " 1" BI T 6.AND.15.= " 0"
CHECK ERASE SUSPEND BIT
BIT 6.= " 1"
CHECK ERASE SUSPEND BIT
BIT 6.AND.15.= " 1"
READ / PROGRAMME WRITE RESUME COMMAND(D0h) PROGRAMME SUSPEND PASSED
READ / PROGRAMME WRITE RESUME COMMAND(D0D0h) PROGRAMME SUSPEND PASSED
Note 8 : If V c c e r r o r b i t i s d e t e c t e d , t r y t o p r o g r a m m e a g a i n a t V c c l e v e l . T h i s i s a n e r a s e a l g o r i t h m f o r a m e m o r y block and not for a card. Reading data from blocks other than the suspended block in the zone generating erase suspend. .OR. : =Logical or ; .AND. : =Logical and
ABSOLUTE MAXIMUM RATINGS Symbol VCC VI VO Topr Tstg Parameter VCC Supply voltage Input voltage Output voltage Operating temperature Storage temperature Conditions With respect to GND Read/Write Operation Ratings -0.5 to 6.5 - 0 . 3 t o VCC+ 0 . 3 0 t o VCC 0 to 70 -40 to 80 Unit V V V C C
MITSUBISHI ELECTRIC 14/22
Feb.1999 Rev2.0
MITSUBISHI MEMORY CARD FLASH MEMORY CARDS R E C O M M E N D E D O P E R A T I N G C O N D I T I O N S ( T a = 0 t o 5 5 C , u n l e s s o t h e r w i s e n o t e d ) Limits Parameter Symbol Min. Typ. Max. VCC VCC Supply voltage 4.75 5.0 5.25 VI H High input voltage 2.4 VCC VI L Low input voltage 0 0.8 Number of simultaneous activated Programme 1 NACT memory zones/blocks Erase 1
Unit
V V V Zone Block
CAPACITANCE
Symbol
Parameter
Test conditions
Min.
Ci Input capacitance VI = G N D , vi = 2 5 m V r m s , f = 1 M HZ, T a = 2 5 C Co O u t p u t c a p a c i t a n c e VI = G N D , vo= 2 5 m V r m s , f = 1 M HZ, T a = 2 5 C Note 9 : These parameters are not 100% tested.
Limits Typ. Max. 45 45
pF pF
ELECTRICAL CHARACTERISTICS Ta= 0 to 55C, VCC=5V+/-5%, unless otherwise noted) Symbol VOH VOL II H II L IOZH IOZL ICC 1 ICC 1
*
Parameter High output current Low output voltage High input current Low output voltage High output current in off state Low output current in off state Active VCC s u p p l y current 1 Active VCC s u p p l y current 2
Conditions IOH=-0.1mA, BVDn IOH= - 1 . 0 m A , O t h e r o u t p u t s IOL=2mA VI =VCC V VI =0V C E 1 # , C E 2 # , O E # , W E # , R E G # Other inputs CE1#=CE2#=VI H or OE#=VI H , VO( D m ) = V C C CE1#=CE2#=VI H or OE#=VI H , VO( D m ) = 0 V CE1#=CE2#=VI L , O t h e r i n p u t s = V I H or V I L , Outputs=open CE1#=CE2# < 0.2V, Other inputs < 0.2V or > VCC- 0 . 2 V , O u t p u t s = o p e n
Limits
Min. Typ. Max.
Unit V
2.4 2.4 0 -10
0.4 10 -70 -10 10 -10 130 110 200 180 6.0 6.0 10 18 22 34 1.2 1.4 1.8 1.8 2.0 2.6
V A A A A mA mA
1 2
*
2MB 4MB ICC 2 * 1 S t a n d b y VCC CE1#=CE2#=VI H , O t h e r 8MB supply current 1 i n p u t s = V I H o r VI L 16MB 20MB 32MB 2MB 0.05 4MB 0.05 ICC 2 * 2 S t a n d b y VCC s u p p l y C E 1 # = C E 2 # > VCC- 0 . 2 V , 8MB 0.10 current 2 Other inputs < 0.2V 16MB 0.20 or > VCC- 0 . 2 V 20MB 0.25 32MB 0.40 Note 10 : Currents flowing into the card are taken as positive (unsigned). T y p i c a l v a l u e s a r e m e a s u r e d a t VCC= 5 . 0 V , T a = 2 5 C. The card consumes active current at programming, erasure even if both CE1# and high level.
mA
A
CE2# are
MITSUBISHI ELECTRIC 15/22
Feb.1999 Rev2.0
MITSUBISHI MEMORY CARD FLASH MEMORY CARDS S W I T C H I N G C H A R A C T E R I S T I C S ( C O M M O N M E M O R Y ) ( T a = 0 t o 5 5 C, Vcc=5V+/-5% ) Limits Parameter Symbol Min. Typ. Max. tcR Read cycle time 150 ta(A) Address access time 150 ta(CE) Card enable access time 150 ta(OE) Output enable access time 75 tdis(CE) 75 Output disable time (from CE#) tdis(OE) ten(CE) ten(OE) tv(A) Output disable time (from OE#) Output enable time (from CE#) Output enable time (from OE#) Data valid time after address change 5 5 0 75
Unit
ns ns ns ns ns ns ns ns ns
T I M I N G R E Q U I R E M E N T S ( C O M M O N M E M O R Y ) ( T a = 0 t o 5 5 C, Vcc=5V+/-5% ) Limits Parameter Symbol Min. Typ. tcW Write cycle time 150 t S U (A) Address setup time 20 trec(WE) Write recovery time 20 tsu(D-WEH) D a t a s e t u p t i m e 50 th(D) Data hold time 20 tWRR Write recovery time before read 0 tsu(A-WEH) A d d r e s s s e t u p t i m e t o w r i t e e n a b l e h i g h 100 tsu(CE) Card enable setup time 20 th(CE) Card enable hold time 20 tw(WE) Write pulse width 80 tWPH Write pulse width high 40 tDP Duration of programming operation 6.5 tDE Duration of erase operation 900 Note 11 : Refer to switching characteristics for read parameters TIMING DIAGRAM Common Memory Read
Max.
Unit
ns ns ns ns ns ns ns ns ns ns ns s ms
tcR
An
VIH VIL VIH
ta(A) ta(CE) tV(A)
CE# VIL
ta(OE) tdis(CE)
VIH OE# VIL
ten(CE)
tdis(OE)
Dm (DOUT) VOL
VOH High-Z
ten(OE)
OUTPUT VALID
W E # =" H" l e v e l , R E G # =" H" l e v e l
MITSUBISHI ELECTRIC 16/22
Feb.1999 Rev2.0
MITSUBISHI MEMORY CARD FLASH MEMORY CARDS TIMING DIAGRAM (COMMON MEMORY) Programme Mode PROGRAMME PROGRAMME SET UP
STATUS REGISTER
RESET
VIH An VIL
tsu(A) tcW trec(WE) tsu(A-WEH)
PA
PA
PA
PA
VIH CE# VIL
tsu(CE) th(CE) tWRR
OE#
VIH VIL
tWPH tDP
WE#
VIH VIL
tsu(D-WEH) th(WE) tw(WE)
Dm
VOH VOL 40
R E G # =" H" l e v e l
Din
High-Z
Dout
FF
Erase Mode ERESE SET UP ERASE STATUS REGISTER RESET
VIH An VIL
tsu(A) tcW trec(WE) tsu(A-WEH)
PA
PA
PA
PA
VIH CE# VIL
tsu(CE) th(CE) tWRR
OE#
VIH VIL
tWPH tDE
WE#
VIH VIL
tsu(D-WEH) th(WE) tw(WE)
Dm
VOH VOL 40
R E G # =" H" l e v e l
Din
High-Z
Dout
FF
MITSUBISHI ELECTRIC 17/22
Feb.1999 Rev2.0
MITSUBISHI MEMORY CARD FLASH MEMORY CARDS SWITCHING CHARACTERISTICS (ATTRIBUTE MEMORY) R e a d C y c l e ( T a = 0 t o 5 5 C , VCC= 5 V + / - 5 % , u n l e s s o t h e r w i s e n o t e d )
Symbol
tcRR ta(A)R ta(CE)R ta(OE)R tdis(dis)R tdis(OE)R ten(CE)R ten(CE)R tv(A)R Read cycle time Address access time Card enable access time Output enable access time
Parameter
Min. 300
Limits Typ.
Max. 300 300 150 100 100
Output disable time (from CE#) Output disable time (from OE#) Output enable time (from CE#) Output enable time (from OE#) Data valid time after address change 5 5 0
Unit ns ns ns ns ns ns ns ns ns
TIMING REQUIREMENTS (ATTRIBUTE MEMORY) W r i t e C y c l e G M s e r i e s o n l y ( T a = 0 t o 5 5 C , VCC= 5 V + / - 5 % , u n l e s s o t h e r w i s e n o t e d ) Limits Parameter Symbol Min. Typ. t AS R Address setup time 30 t AHR Address hold time 30 tCSR CE setup time 40 t C HR CE hold time 30 tDSR Data setup time 120 t D HR Data hold time 40 tOESR OE setup time 30 t O E HR OE hold time 40 tWPR Write pulse width 170 t D LR Data latch time 120 tBLR Byte load cycle time 100 tWCR Write cycle time 10 TIMING DIAGRAM (Attribute Memory) Read
Max.
Unit ns ns ns ns ns ns ns ns ns ns s ms
tCRR
VIH An VIL VIH VIL
ten(CE)R tdis(CE)R ta(OE)R ta(A)R ta(CE)R tv(A)R
CE#
VIH OE# VIL
ten(OE)R
tdis(OE)R
VOH Dm (DOUT) VOL
High-Z OUTPUT VALID
W E # =" H" l e v e l , R E G # =" L" l e v e l
MITSUBISHI ELECTRIC 18/22
Feb.1999 Rev2.0
MITSUBISHI MEMORY CARD FLASH MEMORY CARDS Byte Write (GM series only) tAHR
VIH An VIL VIH CE# VIL
tASR tWPR tCSR tCHR
VIH WE# VIL VIH OE# VIL VIH VIL
ten(OE)R Hi-Z Hi-Z tdis(OE)R tDSR tDHR
tOESR
tOEHR
Dm (DIN)
VOH Dm (DOUT) VOL
R E G # =" L" l e v e l PAGE MODE WRITE (G M s e r i e s o n l y )
An (n>5) An (A0~A5) 0h 2h 4h 3Ch 3Eh
CE# tsu(CE)R WE# tsu(A)R tsu(OE-WE)R OE# t(D-WEH)R DIN Hi-Z tdis(OE)R DOUT Hi-Z th(D)R tcWR trec(WE)R tDLR tBLCR th(OE-WE)R tw(WE)R th(CE)R
R E G # =" L" l e v e l
MITSUBISHI ELECTRIC 19/22
Feb.1999 Rev2.0
MITSUBISHI MEMORY CARD FLASH MEMORY CARDS Note 12 : AC Test Conditions I n p u t p u l s e l e v e l s : VI L = 0 . 4 V , VI H = 2 . 8 V I n p u t p u l s e r i s e , f a l l t i m e : t r =t f = 1 0 n s Reference voltage Input : VI L = 0 . 8 V , VI H = 2 . 4 V O u t p u t : VOL= 0 . 8 V , VOH= 2 . 0 V (ten and tdis are measured when output voltage is 500mV from steady state. ) Load : 100pF+ 1 TTL gate 5pF+ 1 TTL gate (at ten and tdis measuring) 1 3 : T h e d a t a w r i t e i s p e r f o r m e d d u r i n g t h e i n t e r v a l w h e n b o t h C E # a n d W E # a r e " L" l e v e l . 14 : Do not apply inverted phase signal externally when Dm pin is in output mode. 15 : CE# is indicated as follows: R e a d A / W r i t e A : CE#=CE1#=CE2# R e a d B / W r i t e B : C E # = C E 1 # , C E 2 # = " H" l e v e l R e a d C / W r i t e C : C E # = C E 2 # , C E 1 # = " H" l e v e l 16: Indicates the don't care input.
R E C O M M E N D E D P O W E R U P / D O W N C O N D I T I O N S ( T a = 0 t o 5 5 C , u n l e s s o t h e r w i s e n o t e d ) Limits Test conditions Parameter Symbol Min. Max. Unit 0V< VCC <2V 0 VI V Vi(CE) CE input voltage VCC- 0 . 1 VI V 2V< VCC < VIH VI V VIH < VCC VIH t s u (CE) CE# setup time 5.0 ms t r e c( CE) CE# recovery time 1.0 s t p r (VCC) VCC r i s e t i m e 0.1 300 ms t p f (VCC) VCC f a l l t i m e 3.0 300 ms
POWER UP TIMING DIAGRAM
tpr(Vcc) 0.9xVCC 4.75V tsu(CE)
VCC
VIH 2V 0.1xVCC
0V
CE1#,CE2# tpr(Vcc) 4.75V tsu(CE) VIH 2V 0.9xVCC
Insertion VCC
CE1#,CE2#
0.1xVCC
0V
Withdraw
BLOCK PROGRAM/ERASE TIME Limits Parameters Unit Typ. Max. Block erase time 1.1 10 s Block program time 0.5 2.1 s Note 17 : At Ta=25 C, Vcc=5V B y t e / w o r d p r o g r a m t i m e i s a b o u t 8 s ( t y p i c a l ) , b u t n o t g u a r a n t e e d .
MITSUBISHI ELECTRIC 20/22
Feb.1999 Rev2.0
MITSUBISHI MEMORY CARD FLASH MEMORY CARDS
!
Warning ( if card with battery / card with auxiliary battery )
(1)Do not charge, short, disassemble, deform, heat, or throw the batteries into fire, as they may ignite, overheat, rupture or explode. (2)Place the batteries out of the reach of children. If somebody swallows them, they should see a doctor immediately. (3)When discarding or storing the batteries, wrap them individually with cellophane tape or other nonconductive material. If they are positioned in contact with any other metals or batteries, they may explode, rupture or leak electrolyte solution. ! Caution
This product is not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for a special applications, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
Keep safety first in your circuit designs ! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits,(2)use of non-flammable material or (3)prevention against any malfunction or mishap.
Notes regarding these materials lThese materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party. l Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any thirdparty's rights, originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials. l All information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. l For instruction on proper use of the IC card, thoroughly read the manual attached to the product before use. After reading please store the manual in s safe place for future reference. l The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. l If these products or technologies are subject the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. l Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein.
MITSUBISHI ELECTRIC 21/22 Feb.1999 Rev2.0
MITSUBISHI MEMORY CARD FLASH MEMORY CARDS OUTLINE(68P-013)
MITSUBISHI ELECTRIC 22/22 Feb.1999 Rev2.0

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